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19-6146; rev 1; 9/12 general description the MAX16128/max16129 load-dump/reverse-voltage protection circuits protect power supplies from dam - aging input-voltage conditions, including overvoltage, reverse-voltage, and high-voltage transient pulses. using a built-in charge pump, the devices control two external back-to-back n-channel mosfets that turn off and iso - late downstream power supplies during damaging input conditions, such as an automotive load-dump pulse or a reverse-battery condition. operation is guaranteed down to 3v that ensures proper operation during automotive cold-crank conditions. these devices feature a flag out - put ( flag ) that asserts during fault conditions. for reverse-voltage protection, external back-to-back mosfets outperform the traditional reverse-battery diode, minimizing the voltage drop and power dissipa - tion during normal operation. the devices use fixed overvoltage and undervoltage thresholds, minimizing the external component count. the max16129 provides limiter-mode fault management for overvoltage and thermal-shutdown conditions; where - as the MAX16128 provides switch-mode fault manage - ment for overvoltage and thermal shutdown conditions. in the limiter mode, the output voltage is limited and flag is asserted low during a fault. in the switch mode, the external mosfets are switched off and flag is asserted low after a fault. the switch mode is available in four optionslatch mode, 1 autoretry mode, 3 autoretry mode, and always autoretry mode. the MAX16128/max16129 are available in an 8-pin f max m package and operate over the automotive tem - perature range (-40 n c to +125 n c). applications automotive industrial avionics telecom/server/networking features s operates down to +3v, riding out cold-crank conditions s -36v to +90v wide input-voltage protection range s minimal operating voltage drop reverse-voltage protection s fast gate shutoff during fault conditions with complete load isolation s fixed undervoltage/overvoltage thresholds s thermal shutdown protection s low supply current and low shutdown current s internal charge-pump circuit enhances external n-channel mosfet s flag output identifies fault condition s automotive qualified s -40 n c to +125 n c operating temperature range s available in 3mm x 3mm, 8-pin max package ordering information appears at end of data sheet. max is a registered trademark of maxim integrated products, inc. MAX16128/max16129 load-dump/reverse-voltage protection circuits for pricing, delivery, and ordering information, please contact maxim direct at 1-888-629-4642, or visit maxims website at www.maximintegrated.com.
2 (all pins referenced to gnd.) in ............................................................................ -36v to +90v shdn ............................................ -0.3v to max (0v, v in + 0.3v) src, gate ............................................................. -36v to +45v src to gate .......................................................... -36v to +30v out ....................................................................... -0.3v to +45v flag ..................................................................... -0.3v to +45v continuous sink/source (all pins) ................................. q 100ma continuous power dissipation (t a = +70 n c) (multilayer board) f max (derate 12.9mw/ n c above +70 n c) .............. 1030.9mw operating temperature range ........................ -40 n c to +125 n c junction temperature ..................................................... +150 n c storage temperature range ............................ -60 n c to +150 n c lead temperature (soldering, 10s) ................................ +300 n c soldering temperature (reflow) ...................................... +260 n c f max junction-to-ambient thermal resistance ( b ja ) ....... 77.6 n c/w junction-to-case thermal resistance ( b jc ) ................. 5 n c/w absolute maximum ratings note 1: package thermal resistances were obtained using the method described in jedec specification jesd51-7, using a four-layer board. for detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial . stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional opera - tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. package thermal characteristics (note 1) electrical characteristics (v in = 12v, c gate-source = 1nf, t a = -40 n c to +125 n c, unless otherwise noted. typical values are at t a = +25 n c.) (note 2) parameter symbol conditions min typ max units input voltage range v in operating range 3 30 v protection range -36 +90 input supply current i in shdn = high v in = v src = v in = 12v 224 320 f a v in = v src = v in = 30v 260 380 shdn = low v in = v src = v in = 12v 34 50 v in = v src = v in = 30v 64 100 src input current i src v in = v src = 12v 36 200 f a v in = v src = 30v 240 350 internal undervoltage threshold v uv _ th v in rising 0.97 x v uv v uv 1.03 x v uv v internal undervoltage-threshold hysteresis v uv_hys 0.05 x v uv v internal overvoltage threshold v ov_th v in rising 0.97 x v ov v ov 1.03 x v ov v internal overvoltage-threshold hysteresis v ov_hys 0.05 x v ov v maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
3 electrical characteristics (continued) (v in = 12v, c gate-source = 1nf, t a = -40 n c to +125 n c, unless otherwise noted. typical values are at t a = +25 n c.) (note 2) parameter symbol conditions min typ max units internal cold-crank threshold v cck v in falling 0.97 x v cck v cck 1.03 x v cck v internal cold-crank threshold hysteresis v cck_hys 0.05 x v cck v out input resistance to ground r out MAX16128 4 m i max16129 2 pok threshold rising v pok+ 0.9 x v in v pok threshold falling v pok- 0.87 x v in v startup response time t start (note 3) 150 f s autoretry timeout t retry 150 ms gate rise time t rise v gate rising (gnd to v src + 8v) 1 ms overvoltage-to-gate propagation delay t ovg v in rising (MAX16128) from (0.9 x v ov_th ) to (1.1 x v ov _ th ), v out rising (max16129) from (0.9 x v ov_th ) to (1.1 x v ov_th ) 1 f s undervoltage-to-gate propagation delay t uvg v in falling from (1.1 x v uv_th ) to (0.9 x v uv_th ) 21 f s overvoltage to flag propagation delay t ov v in rising (MAX16128) from (0.9 x v ov_th ) to (1.1 x v ov_th ) v out rising (max16129) from (0.9 x v ov_th ) to (1.1 x v ov_th ) 1 f s gate output voltage high above v src v gs v in = v src = v out = 3v, i gate = -1 f a 5 5 5.5 v v in = v src = v out = 12v, i gate = -1 f a 8 9 10 v in = v src = v out = 24v, i gate = -1 f a 7 8.5 10 v in = v src = v out = 30v, i gate = -1 f a 6.25 8 9.5 gate pulldown current i pd v gate = 12v 8.8 ma gate charge-pump current i gate v in = v gate = v src = 12v 180 f a thermal shutdown t + +145 n c thermal-shutdown hysteresis t 15 n c shdn logic-high input voltage v ih 1.4 v shdn logic-low input voltage v il 0.4 v maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
4 typical operating characteristics (v in = 12v, t a = +25 n c, unless otherwise noted.) note 2: all parameters are production tested at t a = +25 n c. limits over the operating temperature range are guaranteed by design and characterization. note 3: the MAX16128/max16129 power up with the external mosfets in off mode (v gate = v src ). the external mosfets turn on t start after the devices are powered up and all input conditions are valid. electrical characteristics (continued) (v in = 12v, c gate-source = 1nf, t a = -40 n c to +125 n c, unless otherwise noted. typical values are at t a = +25 n c.) (note 2) parameter symbol conditions min typ max units shdn input pulse width t pw 6 f s shdn input pulldown current i spd 0.8 1.2 f a flag output voltage low v ol flag sinking 1ma 0.4 v flag leakage current i il v flag = 12v 0.5 f a supply current vs. supply voltage MAX16128/ 29 toc01 supply voltage (v) supply current (a) 33 23 13 100 150 200 250 300 50 3 shdn = high gate enhanced supply current vs. temperature MAX16128/29 toc02 temperature (c) supply current (a) 120 100 -20 02 06 0 40 80 170 190 210 230 250 270 290 310 150 -40 shdn = high gate enhanced shutdown supply curent vs. supply voltage MAX16128 /2 9 toc03 supply voltage (v) supply current (a) 27 21 15 9 20 30 40 50 60 70 80 90 100 10 3 shdn = low shutdown supply current vs. temperature MAX16128 /2 9 toc04 temperature (c) supply current (a) 110 95 65 80 -10 5 20 35 50 -25 15 20 25 30 35 40 45 50 10 -40 125 shdn = low 0.1 0.2 0.3 0.4 0.6 0.7 0.8 0.9 0.5 shdn pulldown current vs. temperature MAX16128 / 29 toc05 temperature (c) shdn pulldown current (a) 110 95 65 80 -10 5 20 35 50 -25 1.0 0 -40 125 maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
5 typical operating characteristics (continued) (v in = 12v, t a = +25 n c, unless otherwise noted.) 8 11 14 17 gate pulldown current vs. temperature MAX16128 /2 9 toc08 temperature (c) gate pulldown current (ma) 110 95 65 80 -10 5 20 35 50 -25 20 5 -40 125 v gate = 12v gate pullup current vs. v in MAX16128 / 29 toc09 gate pull-up current (a) 20 40 60 100 80 140 120 160 180 200 0 v in (v) 30 20 25 15 10 5 0 v in = v gate = v src gate enhanced internal overvoltage threshold vs. temperature MAX16128 /2 9 toc10a temperature (c) internal overvoltage threshold (%v ov ) 110 95 65 80 -10 5 20 35 50 -25 102 90 -40 125 92 94 96 98 100 rising falling internal undervoltage threshold vs. temperature MAX16128 /2 9 toc10b temperature (c) internal undervoltage threshold (%v uv ) 110 95 65 80 -10 5 20 35 50 -25 102 104 90 -40 125 92 94 96 98 100 rising falling gate-to-src voltage vs. v in MAX16128 / 29 toc06 v in (v) gate-to-src voltage (v) 30 25 15 20 10 5 1 2 3 4 5 6 7 8 9 10 0 03 5 flag output low voltage vs. current MAX16128/ 29 toc11 flag current (ma) flag voltage (v) 1.5 1.0 0.5 0.1 0.2 0.3 0.4 0.5 0 02 .0 gate-to-src voltage vs. temperature MAX16128 / 29 toc07 temperature (c) gate-to-src voltage (v) 110 95 65 80 -10 52 03 55 0 -25 10.0 6.0 -40 125 6.8 6.4 7.2 7.6 8.0 8.4 9.2 8.8 9.6 v in = v src = v out = 12v gate enhanced maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
6 typical operating characteristics (continued) (v in = 12v, t a = +25 n c, unless otherwise noted.) startup waveform (v in pulsed o to 12v, r load = 100i , c in = 0.1f, c out = 10f) MAX16128/ 29 toc14 200s / div v in 10v/div v gate 10v/div v out 10v/div overvoltage switch fault (v ov = 21v, c in = 0.1f, c out = 10f) MAX16128/ 29 toc16 20ms /d iv v in 20v/div v gate 10v/div v out 10v/div startup from shutdown (shdn) rising from o to 2v, v in = 12v, r load = 100i , c in = 0.1f MAX16128/ 29 toc15 400s / div v shdn 2v/div v gate 10v/div v out 10v/div overvoltage limiter (v ov = 21v, c in = 0.1f, c out = 10f) MAX16128/ 29 toc17 20ms / div v in 20v/div v gate 20v/div v out 10v/div 1.2 1.4 1.6 1.8 overvoltage fault-to-gate propagation delay vs. temperature MAX16128 / 29 toc12 temperature (c) propagation delay (s) 110 95 65 80 -10 5 20 35 50 -25 2.0 1.0 -40 125 reverse current vs. reverse voltage MAX16128 / 29 toc13 reverse voltage (v) reverse current (a) 25 20 15 10 5 5 10 15 20 25 30 0 03 0 maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
7 pin configuration pin description pin name function 1 out output voltage-sense input. connect out to the load with a 100 i series resistor. bypass with a minimum 10 f f capacitor to gnd. 2 src source input. connect src to the common source connection of the external mosfets. when the mosfets are turned off, this connection is clamped to gnd. an external zener diode between src and gate protects the gates of the external mosfets. 3 gate gate-driver output. connect gate to the gates of the external n-channel mosfets. gate is the charge- pump output during normal operation. gate is quickly pulled low during a fault condition or when shdn is pulled low. 4 in positive supply input voltage. connect in to the positive side of the input voltage. bypass in with a 0.1 f f ceramic capacitor to gnd. 5 shdn shutdown input. drive shdn low to force gate and flag low and turn off the external n-channel mosfets. connect a 100k i resistor from shdn to in for normal operation. 6 gnd ground 7 i.c. internally connected to gnd 8 flag flag output. during startup, flag is low as long as v out is lower than 90% of v in and after that it is high impedance. it asserts low during shutdown mode, an overvoltage, thermal shutdown, or undervoltage fault or when v out falls below 90% of v in . flag asserts low during a cold-crank fault to signal reverse-current protection. top view + 1 2 3 4 8 7 6 5 flag i.c. gnd in gate src out MAX16128 max16129 max shdn maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
8 detailed description the MAX16128/max16129 transient protection circuits are suitable for automotive and industrial applications where high-voltage transients are commonly present on supply voltage inputs. the devices monitor the input voltage and control two external common-source n-channel mosfets to protect downstream voltage regulators during load- dump events or other automotive pulse conditions. the devices feature an overvoltage and an undervoltage comparator for voltage window detection. a flag output ( flag ) asserts when a fault event occurs. two external back-to-back n-channel mosfets provide reverse-voltage protection and also prevent reverse current during a fault condition. compared to a traditional reverse-battery diode, this approach minimizes power dissipation and voltage drop. the max16129 provides a limiter-mode fault manage - ment for overvoltage and thermal-shutdown conditions, whereas the MAX16128 provides switch-mode fault management for overvoltage and thermal-shutdown con - ditions. in the limiter mode, the mosfets cycle on and off so the output voltage is limited. in the switch mode, the external mosfets are switched off, disconnecting the load from the input. in both cases, flag asserts to indicate a fault. gate charge pump the devices use a charge pump to generate the gate to src voltage and enhance the external mosfets. after the input voltage exceeds the input undervoltage threshold, the charge pump turns on after a 150 f s delay. during a fault condition, gate is pulled to ground with an 8.8ma (min) pulldown current. note that an exter - nal zener diode is required to be connected between the gate and source of the external mosfets (see the applications information section). overvoltage protection the devices detect overvoltage conditions using a com - parator that is connected through an internal resistive divider to the input or output voltage. an overvoltage condition causes the gate output to go low, turning off the external mosfets. flag also asserts to indicate the fault condition. overvoltage limiter (max16129) in overvoltage-limiter mode, the output voltage is regu - lated at the overvoltage-threshold voltage and continues to supply power to downstream devices. in this mode, the device operates like a voltage regulator. during normal operation, gate is enhanced 9v above src. the output voltage is monitored through an internal resistive divider. when out rises above the overvoltage threshold, gate goes low and the mosfets turn off. as the voltage on out falls below the overvoltage threshold minus the threshold hysteresis, gate goes high and the mosfets turn back on again, regulating out in a switched-linear mode at the overvoltage threshold. the switching frequency depends on the gate charge of the mosfets, the charge-pump current, the output load current, and the output capacitance. caution must be exercised when operating the max16129 in voltage-limiting mode for long durations. since mosfets can dissipate power continuously during this interval, proper heatsinking should be implemented to prevent damage to them. overvoltage switch (MAX16128) in the overvoltage switch mode, the internal overvolt - age comparator monitors the input voltage and the load is completely disconnected from the input during an overvoltage event. when the input voltage exceeds the overvoltage threshold, gate goes low and the mosfets turn off, disconnecting the input from the load. after that, for the autoretry-mode version, the autoretry timer starts, while for the latched-mode version a power cycle to in or a cycle on shdn is needed to turn the external mosfets back on. the MAX16128 can be configured to latch off (suffix d ) even after the overvoltage condition ends. the latch is cleared by cycling in below the undervoltage threshold or by toggling shdn . the devices can also be configured to retry: u one time, then latch off (suffix b ) u three times, then latch off (suffix c ) u always retry and never latch off (suffix a ) there is a fixed 150ms (typ) delay between each retry attempt. if the overvoltage-fault condition is gone when a retry is attempted, gate goes high and power is restored to the downstream circuitry. maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
9 undervoltage protection the devices monitor the input voltage for undervoltage conditions. if the input voltage is below the undervoltage threshold (v in < v uv-th - v uv-hys ), gate goes low, turning off the external mosfets and flag asserts. when the input voltage exceeds the undervoltage thresh - old (v in > v uv_th ), gate goes high after a 150 f s delay (typ). for the MAX16128/max16129, the undervoltage thresh - old is determined by the part number suffix option (see table 2 ). cold-crank monitoring cold-crank faults occur when the input voltage decreas - es from its steady-state condition. a cold-crank com - parator monitors in through an internal resistive divider. the MAX16128/max16129 offer two ways to handle this kind of fault depending on a part number suffix (see the selector guide ): ? the cold-crank comparator is disabled and external mosfets stay on during the falling input-voltage transient unless the input voltage falls below the undervoltage threshold (see table 2 ). ? the cold-crank comparator is enabled and external mosfets are switched off by pulling down gate if the input voltage falls below the cold-crank threshold to avoid load discharge due to reverse current from out to in (see table 4 ). in the last case, cold-crank protection is enabled as long as v out is higher than 90% of v in (with a 3% hysteresis) and v in is higher than the undervoltage threshold. when the monitored input voltage falls below the falling cold - crank fault threshold (v in < v cck ), the gate is pulled down and flag is asserted low. when the input voltage rises back above the rising cold-crank fault threshold (v in > v cck + v clk_hys ), flag is released and the charge pump enhances gate above src, reconnecting the load to the input. thermal shutdown the devices thermal-shutdown feature turns off the mosfets if the internal die temperature exceeds 145 n c (t j ). by ensuring good thermal coupling between the mosfets and the devices, the thermal shutdown can turn off the mosfets if they overheat. when the junction temperature exceeds t j = +145 n c (typ), the internal thermal sensor signals the shutdown logic, pulling the gate voltage low and allowing the device to cool. when t j drops by 15 n c (typ), gate goes high and the mosfets turn back on. do not exceed the absolute maximum junction-temperature rating of t j = +150 n c. flag output ( flag ) an open-drain flag output indicates fault conditions. during startup, flag is initially low and goes high imped - ance when v out is greater than 90% of v in if no fault conditions are present. flag asserts low during shut - down mode, an overvoltage, thermal shutdown, or under - voltage fault, or when v out falls below 90% of v in . in the versions where the cold-crank comparator is enabled, flag asserts low during a cold-crank fault. reverse-voltage protection the devices integrate reverse-voltage protection, pre - venting damage to the downstream circuitry caused by battery reversal or negative transients. the devices can withstand reverse voltage to -6v without damage to themselves or the load. during a reverse-voltage condi - tion, the two external n-channel mosfets are turned off, protecting the load. connect a 0.1 f f ceramic capacitor from in to gnd, connect a 10nf ceramic capacitor from gate to src, connect a 10 f f capacitor from out to gnd, and minimize the parasitic capacitance from gate to gnd to have fast reverse-battery voltage-transient protection. during normal operation, both mosfets are turned on and have a minimal forward-voltage drop, pro - viding lower power dissipation and a much lower voltage drop than a reverse-battery protection diode. applications information automotive electrical transients (load dump) automotive circuits generally require supply voltage protection from various transient conditions that occur in automotive systems. several standards define various pulses that can occur. table 1 summarizes the pulses from the iso 7637-2 specification: most of the pulses can be mitigated with capacitors and zener clamp diodes (see the typical operating characteristics and also the increasing the operating voltage range section). the load dump (pulse 5a and 5b) occurs when the alternator is charging the battery and a battery terminal gets disconnected. due to the sudden change in load, the alternator goes out of regula - tion and the bus voltage spikes. the pulse has a rise time of about 10ms and a fall time of about 400ms but can extend out to 1s or more depending on the characteris - maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
10 table 1. summary of iso 7637-2 pulses tics of the charging system. the magnitude of the pulse depends on the bus voltage and whether the system is unsuppressed or uses central load-dump suppression (generally implemented using very large clamp diodes built into the alternator). table 1 lists the worst-case values from the iso 7637-2 specification. cold crank (pulse 4) occurs when activating the starter motor in cold weather with a marginal battery. due to the large load imposed by the starter motor, the bus voltage sags. since the devices can operate down to 3v, the downstream circuitry can continue to operate through a cold-crank condition. if desired, the undervoltage thresh - old can be increased so that the mosfets turn off during a cold crank, disconnecting the downstream circuitry. an output reservoir capacitor can be connected from out to gnd to provide energy to the circuit during the cold- crank condition. refer to the iso 7637-2 specification for details on pulse waveforms, test conditions, and test fixtures. mosfet selection mosfet selection is critical to design a proper protec - tion circuit. several factors must be taken into account: the gate capacitance, the drain-to-source voltage rating, the on-resistance (r ds(on) ), the peak power-dissipation capability, and the average power-dissipation limit. in general, both mosfets should have the same part num - ber. for size-constrained applications, a dual mosfet can save board area. select the drain-to-source voltage so that the mosfets can handle the highest voltage that might be applied to the circuit. gate capacitance is not as critical but it does determine the maximum turn-on and turn-off time. mosfets with more gate capacitance tend to respond more slowly. mosfet power dissipation the r ds(on) must be low enough to limit the mosfet power dissipation during normal operation. power dissipation (per mosfet) during normal operation can be calculated using this formula: p = i load 2 x r ds(on) where p is the power dissipated in each mosfet and i load is the average load current. during a fault condition in switch mode, the mosfets turn off and do not dissipate power. limiter mode impos - es the worst-case power dissipation. the average power can be computed using the following formula: p = i load x (v in - v out ) where p is the average power dissipated in both mosfets, i load is the average load current, v in is the input voltage, and v out is the average limited voltage on the output. in limiter mode, the output voltage is a sawtooth wave with characteristics determined by the r ds(on) of the mosfets, the output load current, the output capacitance, the gate charge of the mosfets, and the gate charge-pump current. since limiter mode can involve high switching currents when the gate is turning on at the start of a limiting cycle (especially when the output capacitance is high), it is important to ensure the circuit does not violate the peak power rating of the mosfets. check the pulse power ratings in the mosfet data sheet. mosfet gate protection * relative to system voltage name description peak voltage (v) (max) * duration 12v system pulse 1 inductive load disconnection -100 1 to 2ms pulse 2a inductive wiring disconnection 50 0.05ms pulse 3a switching transients -150 0.2 f s pulse 3b 100 pulse 4 cold crank -7 100ms (initial) -6 up to 20s pulse 5a load dump (unsuppressed) 87 400ms (single) pulse 5b load dump (suppressed) (varies, but less than pulse 5a) maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
11 to protect the gate of the mosfets, connect a zener clamp diode from the gate to the source. the cathode connects to the gate, and the anode connects to the source. choose the zener clamp voltage to be above 10v and below the mosfet v gs maximum rating. increasing the operating voltage range the devices can tolerate -36v to +90v. to increase the positive input-voltage protection range, connect two back-to-back zener diodes from in to gnd, and connect a resistor in series with in and the power-supply input to limit the current drawn by the zener diodes (see figure 1 ). zener diode d1 clamps positive voltage excursions and d2 clamps negative voltage excursions. set the zener voltages so the worst-case voltages do not exceed the ratings of the part. also ensure that the zener diode power ratings are not exceeded. the combination of the series resistor and the zener diodes also help snub pulses on the supply voltage input and can aid in clamp - ing the low-energy iso 7637-2 pulses. it is important to compute the peak power dissipation in the series resistor. most standard surface-mount resis - tors are not able to withstand the peak power dissipa - tion during certain pulse events. check the resistor data sheets for pulse-power derating curves. if necessary, connect multiple resistors in parallel or use automotive- rated resistors. the shutdown input needs a series resistor to limit the current if v in exceeds the clamped voltage on in. a good starting point is 100k i . output reservoir capacitor the output capacitor can be used as a reservoir capaci - tor to allow downstream circuitry to ride out fault transient conditions. since the voltage at the output is protected from input-voltage transients, the capacitor voltage rating can be less than the expected maximum input voltage. figure 1. circuit to increase input-voltage protection range gnd 100i 100ki 100nf gate v batt src out in out dc-dc converter shdn flag in gnd d1 d2 r3 r3 MAX16128 max16129 10nf 10f maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
12 figure 2. MAX16128/max16129 typical operating circuit typical operating circuit gate v in 100ki 100nf 10nf src out v out c out 10f shdn in gnd MAX16128 max16129 flag 100i maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
13 figure 3. MAX16128/max16129 functional diagram functional diagram 1.225v 1.225v power- ok charge pump out src gate control logi c cck 1.225v uv ov shdn flag in thermal protection gnd MAX16128 max16129 maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
14 ordering information note: the first _ is a placeholder for the undervoltage threshold. a desired undervoltage threshold is set by the letter suffix found in table 2 . the second _ is a placeholder for the overvoltage threshold. a desired overvoltage threshold is set by the letter suffix found in table 3 . the third _ is a placeholder for the cck threshold set by the letter suffix found in table 4 . for MAX16128 options, the fourth _ is a placeholder for the switch-mode option. a desired switch mode is set by the letter suffix found in table 5 . + denotes a lead(pb)-free/rohs-compliant package. package information for the latest package outline information and land patterns (foot - prints), go to www.maximintegrated.com/packages . note that a +, #, or - in the package code indicates rohs status only. package drawings may show a different suffix character, but the drawing pertains to the package regardless of rohs status. chip information process: bicmos table 4. cck threshold (third suffix) table 3. ov threshold (v) (second suffix) table 5. switch mode option (MAX16128 only) table 2. uv threshold (v) (first suffix) selector guide part temp range pin-package function MAX16128 aua_ _ _ _+ -40c to +125c 8 f max switch mode max16129 aua _ _ _ + -40c to +125c 8 f max limiter mode part pin- package top mark function MAX16128auaacac+ 8 f max +aace switch mode max16129auaebd+ 8 f max +aacg limiter mode part suffix ov threshold (typ) (v) a 13.64 b 15 c 18.6 d 20.93 e 24.16 f 28.66 g 31.62 part suffix switch mode a always autoretry b one retry, then latch c three retries, then latch d latch mode package type package code outline no. land pattern no. 8 f max u8+1 21-0036 90-0092 part suffix uv threshold (typ) (v) a 3 b 5 c 5.98 d 7.03 e 8.13 f 9.09 g 10.3 part suffix cck threshold (typ) (v) a no cck b 5.64 c 7.65 d 9.67 maxim integrated MAX16128/max16129 load-dump/reverse-voltage protection circuits
maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a maxim product. no circuit patent licenses are implied. maxim reserves the right to change the circuitry and specifications without notice at any time. the parametric values (min and max limits) shown in the electrical characteristics table are guaranteed. other parametric values quoted in this data sheet are provided for guidance. maxim integrated 160 rio robles, san jose, ca 95134 usa 1-408-601-1000 15 ? 2012 maxim integrated the maxim logo and maxim integrated are trademarks of maxim integrated products, inc. revision history revision number revision date description pages changed 0 12/11 initial release 1 9/12 updated the features , electrical characteristics , typical operating characteristics , cold-crank monitoring , increasing the operating voltage range sections, and tables 3 and 4 1C5, 9, 11, 14 MAX16128/max16129 load-dump/reverse-voltage protection circuits

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